1 d a t a s h e e t : c p w 2 - 0 6 0 0 s 0 0 8 r e v . a CPW2-0600S008 Csilicon carbide schottky diode chip z -r ec tm r ectifier features ? 600-volt schottky rectifer ? zero reverse recovery ? zero forward recovery ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f chip outline maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current 8 a t j =175?c i frm repetitive peak forward surge current 57 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 1 i fsm non-repetitive peak forward surge current 220 a t c =25?c, t p =10 s, pulse 1 t j , t stg operating junction and storage temperature -55 to +175 ?c part number anode cathode package marking CPW2-0600S008b al niv/ag sawn on foil wafer # on foil v rrm = 600 v i f(avg) = 8 a q c = 21 nc subject to change without notice. www.cree.com/power
2 CPW2-0600S008 rev. a electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.6 1.9 1.8 2.4 v i f = 8 a t j =25c i f = 8 a t j =175c i r reverse current 10 20 50 200 a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 21 nc v r = 600 v, i f = 8 a d i /d t = 500 a/s t j = 25c c total capacitance 441 39 33 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. assumes jc thermal resistance of 1.5 ?c/w or less mechanical parameters parameter typ. unit die size 1.77 x 1.77 mm anode pad size 1.45 x 1.45 mm anode pad opening 1.38 x 1.38 mm thickness 377 10% m wafer size 100 mm anode metalization (al) 4 m cathode metalization (niv/ag) 1.8 m frontside passivation polyimide
3 this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2009-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. 3 CPW2-0600S008 rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power chip dimensions part number anode cathode package marking CPW2-0600S008b al niv/ag sawn on foil wafer # on foil the die-on-tape method of delivering these sic die may be considered a means of temporary storage only. due to an increase in adhesion over time, die stored for an extended period may affx too strongly to the tape. these die should be stored in a temperature-controlled nitrogen dry box soon after receipt. cree will further recommend that all die be removed from tape to a waffe pack, to a similar storage medium, or used in production within 2 C 3 weeks of delivery to assure 100% release of all die without issues. a a b b symbol dimension mm inch a 1.77 0.070 b 1.45 0.057
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